Abstract
The preparation and properties of tantalum pentoxide (Ta 2O 5) thin film have been studied with respect to its application as a capacitor dielectric material in low-power, high-density dynamic random access memories (DRAMs). Ta 2O 5 films were deposited in a hot wall-type vertical furnace by a low pressure metal organic chemical vapour deposition (LPMOCVD) process at low temperatures (375–500°C) and then annealed in oxygen ambient at temperatures up to 1000°C. This annealing treatment improved significantly the electrical properties of the Ta 2O 5 film.
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