Thin single-crystal Ge layers on 2″ Si substrates

Abstract

Conditions for preparing thin homogeneous mirror-smooth Ge layers on 2″ Si substrates by hot wire chemical vapor-phase deposition have been determined. Ge layers 200 nm thick have a structure of epitaxial mosaic single crystal with almost completely relaxed elastic stresses. The X-ray diffraction rocking curve half-width is less than 6′. The density of grown-in dislocations in Ge layers is in the range of (3–6) × 105 cm−2, and the rms surface roughness does not exceed 0.8 nm.