Abstract
AbstractLaser crystallization of amorphous silicon film on polymeric substrate is reported. Intrinsic amorphous films 1000 Å thick have been deposited on Polyethersulphone (PES) by PECVD technique in the deposition temperature range of 120‐200 °C. Dehydrogenation and crystallization of the thin films have been obtained by high energy (10 J) XeCl pulsed excimer laser. The irradiation conditions have been varied to study their influence on dehydrogenated and crystallized material properties. Electrical and optical properties of as‐deposited and crystallized films have been investigated. Structural characterization (SEM, XRD, AFM) has been performed. Average crystallite size and grain distribution have been evaluated.For the substrate, the glass transition temperature (Tg) and the coefficient of thermal expansion (CTE) have been evaluated by DSC (Differential Scanning Calorimetry) and TMA (Thermo Mechanical Analysis) measurements and the compatibility with the deposition and crystallization processes have been verified.
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