Abstract
We present a method to produce thin SiGe virtual substrates suitable for electronic applications. This method is based on the gas phase process of low-energy plasma-enhanced chemical vapor deposition. The strain-relaxed buffers are characterized by X-ray diffractometry, transmission electron microscopy and atomic force microscopy. We find threading dislocation densities lower than 3×10 8 cm −2 and a surface rms roughness of 1.8 nm, for a buffer thickness of 500 nm. Room temperature electrical results are also presented, which are competitive with those obtained on SiGe buffers produced by other methods.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
