Thin oxide grown on heavily channel-implanted substrate by using a low temperature wafer loading and N 2 pre-annealing process

Abstract

In this paper, we present high integrity thin oxides grown on the channel implanted substrate (⩾3 × 10 17 cm −3) and heavily doped substrate (⩾1 × 10 20 cm −3) by using a low-temperature wafer loading and N 2 pre-annealing process. The presented thin oxide grown on the channel implanted substrate exhibits a very low interface state density (⩽1 × 10 10 cm −2 eV −1) and a very high intrinsic dielectric breakdown field (⩾15 MV/ cm). It also shows a lower charge trapping rate and interface state generation rate than the conventional thermal oxide. For the thin oxide grown on the heavily-doped substrate by using the proposed recipe, the implantation-induced damage close to the silicon surface can be almost annealed out. The presented heavily-doped oxide shows much better dielectric characteristics, such as the dielectric breakdown field and the charge-to-breakdown, as compared to the conventional heavily-doped oxide.