Abstract
Abstract Work function changes of (NiO)1−x(Al2O3)x, Al doped and Al coated NiO layers upon NO2, CO2, SO2, Cl2, CO, NH3 and H2 at 30°C and 130°C were measured by means of a Kelvin probe. Compared to the `pure' oxides NiO and Al2O3, a significant impact of the stoichiometry x, the Al dopant concentration and the Al surface modification not only on the sensitivity, but also on the selectivity and the response behaviour of the samples was found. The material screening was carried out with respect to the incorporation of the most sensitive and selective layers into hybrid suspended gate FET (HSGFET) devices. The sensor measurements were found to be in good agreement with those carried out by the Kelvin probe.
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