Thin nanocrystalline zirconia films prepared by pulsed laser deposition

Abstract

In the present work, thin zirconia films were prepared by pulsed laser deposition at different substrate temperatures and oxygen partial pressures. The substrate temperature was varied from 400 °C to 600 °C, and the oxygen pressure, from 0.01 to 0.05 mbar. The effect was investigated of the substrate temperature and oxygen pressure on the formation of m-zirconia and t-zirconia phases.The formation of a cubic phase of ZrO2 by using targets doped with 3 and 8 mol % content Y2O3 was also investigated. The variation in the optical properties was studied and discussed in relation with the zirconia films' microstructure.