Abstract
AbstractUsing He+ as probe particles, we have studied point defects in Mo thin films (5-1000 Å) deposited without and with Ar+ ion beam assistance (0.2–22 eV per Mo atom). It is found that the net effect of the ion beam is to produce rather than to annihilate point defects. Ar incorporation is only slight (-10-4). Annealing of the films leads to the thermal production of polyvacancies.
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