Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers

Abstract

The authors report an effective lateral current-distribution scheme to achieve uniform hole injection in GaN-based vertical-cavity lasers. A thin (∼5nm) intracavity Pd∕Au layer is used to simultaneously achieve a low-resistance Ohmic contact and effective lateral current distribution across a circular injection aperture. Precise placement of a thin metal layer in a vertical-cavity laser is shown to yield negligible single-pass optical loss. Light-emitting diodes utilizing this intracavity contact and lateral current-distribution scheme are demonstrated, with effective lateral current distribution observed for aperture diameters up to 36μm. Continuous-wave operation at current densities exceeding 10kA∕cm2 is demonstrated.