Thin iron films on Si(111) and formation of a (√3 × √3)R30° structure

Abstract

Iron films deposited on Si(111) have been studied using Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and electron loss spectroscopy (ELS). At room temperature, an Fe(111) epitaxial film is produced. For Fe coverages less than 1 ML, the structure changes from (1 × 1) to (2 × 2) after annealing above 400° C. If the average thickness is more than 2 ML a FeSi 2 compound grows. For coverages of more than 1 ML and less than 2 ML, the two-dimensional silicide FeSi with a (√3 × √3)R30° superstructure is formed.