Abstract
Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by MOVPE. The quality of the GaSb buffer layers is optimized and epitaxial InAs layers are grown on GaSb layers of various thickness. The best GaSb buffer layers are obtained for a nucleation temperature of 450 °C and a subsequent growth temperature of 570 °C with a V/III ratio of 3, as confirmed by both the structural (high-resolution XRD, AFM) and electrical (Hall) measurements. Furthermore, a clear relationship between the structural quality of the GaSb and InAs layers is established. Finally, free-standing InAs structures are fabricated where Hall measurements reveal a mobility that depends on the film thickness.
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