Abstract
Gallium oxide deposition was carried out on GaAs with the alternating supply of source gases, TEGa and H2O2. Strong temperature dependence of growth rate per cycle was observed together with some structural change in the films. A critical thickness of 20 nm for the thermal desorption of gallium oxide, above which the film thickness was not changed by the thermal treatment at 600°C for 90 min, was observed for the first time. With implications for in situ process use, deposition characteristics of GaAs on these gallium oxides were investigated by chemical beam epitaxy (CBE), and the results indicated that oxide structure greatly affects selectivity.
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