Abstract
Introduction: In this study, a simple and facile route was employed to prepare a highly transparent and luminescent ultra-thin gallium doped ZnO film (GZO). Methods: The thin GZO film has been deposited using the simultaneously ultrasonic vibration and sol-gel spin-spray coating technique. The structural and optical properties of pure and doped thin films were investigated by various methods, such as X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), scanning electron microscopy (SEM), UV-Vis, and PL spectroscopy. Results: XRD results indicated that both pure and doped ZnO films had a hexagonal wurtzite structure with (101) preferred orientation. XPS and EDX studies confirmed the incorporation and presence of Ga ions into the ZnO lattice structure. The doped sample showed nearly 90% of transparency, and a strong blue-green emission in the visible region. Conclusion: The obtained results proved that the prepared thin film could be a novel candidate for optoelectronic applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
