Abstract
With the recent developments in the technology of gallium arsenide, it is likely that a greater use of this semiconductor material will emerge than at present. An important reason for this is the new understanding of ohmic-contact formation by a thin-film epitaxy process, which could possibly even find other wider applications in device manufacture now, and lead to the manufacture of normally-off m.o.s.f.e.t.s. The latter device is particularly suitable for high-speed integration and monolithic interfacing with optical devices because of its small standby power dissipation
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