Abstract
Thin film technology shows high promise in fabrication of electronic devices such as gas sensors. Tungsten trioxide (WO 3 ), as one of the best-known metal oxide semiconductors (MOS) sensing materials, has attracted significant interest for application in gas sensors. In this review, WO 3 thin films and their promising utilization as the sensing layers are overviewed to highlight their potential in gas sensors. First, the sensing mechanism for WO 3 materials is briefly discussed. Then, several methods for WO 3 film preparation are summarized. Following we discuss the specific gas sensing performances of WO 3 film sensors to NO 2 , H 2 , NH 3 , and H 2 S. Strategies to improve the sensor properties such as sensitivity, response-recovery speed and selectivity are also discussed. Finally, the future perspectives and challenges of WO 3 thin film sensors are addressed.
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