Abstract
Abstract Thin films of Cu–In–Ga–Se alloy system with various composition were prepared by thermal crystallization from In/CuInGaSe/In precursor. Electron probe microanalysis and X-ray diffraction study revealed that these samples were assigned to chalcopyrite Cu(In,Ga)Se 2 or ordered vacancy compound Cu(In,Ga) 2 Se 3.5 . Solar cell with ZnO:Al/ i –ZnO/CdS/Cu(In,Ga)Se 2 /Mo/soda-lime glass substrate structure was fabricated by using thermal crystallization technique, and demonstrated a 9.58% efficiency without AR-coating.
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