Abstract
The reaction of Co with epitaxial Si 1− y C y (001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi 2 films grown at 650°C on Si 0.999C 0.001 and on Si. Whereas the CoSi 2 is fully polycrystalline on Si(001), partially oriented CoSi 2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi 2 crystallites has been observed with increasing C concentration.
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