Abstract
A doped CdTe/CdS photovoltaic structure has been grown onto ITO coated glass substrates by metal organic chemical vapour deposition (MOCVD). CdS is nucleated from dimethylcadmium and ditertiarybutylsulphide at 290°C followed by CdTe growth from DMCd and diisopropyltelluride at 300–310°C. The grain size of the CdTe is approximately the same as the underlying CdS layer and with a strongly prefered (1 1 1) orientation. This has been achieved without post growth annealing or chemical treatment. Similarly, doping of both the CdS and CdTe layer have been achieved during growth to form a n–p junction. The dopant precursors are n-butylchloride for the CdS layer and dimethylaminoarsenic for the CdTe layer. Preliminary photovoltaic devices show good rectification, with an open circuit voltage of 0.14 V, and fill factors of 35–50%.
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