Abstract
Thin films of amorphous silicon-carbon alloy were obtained by sputtering silicon and carbon target with argon in radio-frequency magnetron sputtering equipment. Both Si-C and C-C combinations form structures close to the randomly combined structure and the Si-Si combination at shows a feature of the chemically ordered structure. The film at is hard and shows a high energy gap, due to the configuration in C-C combinations formed by the effect of surrounding tetragonal structure of silicon. © 2001 The Electrochemical Society. All rights reserved.
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