Abstract
Zn0.80Mg0.17Al0.03O (AZMO) thin film of 180–200 nm in thickness was produced by radio frequency (r. f.) argon-ion sputtering from commercial ZnO:Al and Mg-metal targets with 150 and 200 W of applied r. f. power. AZMO film is of bandgap 3.62 eV, compared with 3.25 eV for Zn0.96Al0.04O (AZO) film. The electrical conductivity (σ) of AZO film is 80 Ω−1 cm−1, which reduces to 0.2 Ω−1 cm−1 when the film was heated in air at 300°C. For AZMO film these values are, 10 and 10−4 Ω−1 cm−1, respectively. Thus, the AZMO film is converted to a high resistive transparent n-type film for solar cell. Such films on F-doped SnO2 (FTO) film was used in antimony sulfide solar cell: FTO/AZMO/Sb2S3/C-Ag. This cell showed notable increase in the short circuit current density (10.86 mA/cm2) with respect the solar cell, FTO/CdS/Sb2S3/C (6.28 mA/cm2). The increase is due to improved external quantum efficiency toward the ultraviolet region. The open circuit voltage of these cells are 0.478 V and 0.627 V, respectively, with conversion efficiencies of 1.3% and 1.13%.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
