Abstract

Er 2O 3 was used to fabricate thin film transistors (TFTs) using the multiple pumpdown (MPD) method of device fabrication. CdS-Er 2O 3, CdSe-Er 2O 3 and (CdS-CdSe)-Er 2O 3 were used as the semiconductor-insulator combinations. In the “mixed semiconductor” TFT a mixture of CdS and CdSe in the ratio of 1:1 by weight was used. The various transistor parameters are presented. Parameters such as critical donor density, trap density, mobility and crystallite size were calculated using a model proposed by Levinson et al.

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