Abstract
Thin film transistors (TFTs) on glass substates, necessary for the fabrication of active matrix liquid crystal displays (AMLCDs), are usually fabricated in amorphous silicon films deposited on low temperature sheet glass, such as soda lime glass, or in polycrystalline silicon films (as-deposited or crystallized) deposited on quartz or glass by LPCVD. The purpose of this work is to demonstrate the feasibility of the fabrication of TFTs with much higher mobility in single crystal silicon films on glass, even on soda lime glass substrates. An electron mobility improvement of an order of magnitude over that achieved in polycrystalline films on glass substrates has been obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.