Abstract
Thin film transistors (TFTs) on glass substates, necessary for the fabrication of active matrix liquid crystal displays (AMLCDs), are usually fabricated in amorphous silicon films deposited on low temperature sheet glass, such as soda lime glass, or in polycrystalline silicon films (as-deposited or crystallized) deposited on quartz or glass by LPCVD. The purpose of this work is to demonstrate the feasibility of the fabrication of TFTs with much higher mobility in single crystal silicon films on glass, even on soda lime glass substrates. An electron mobility improvement of an order of magnitude over that achieved in polycrystalline films on glass substrates has been obtained.
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