Abstract
This study demonstrates that nanocrystalline TiO 2 thin films were deposited on ITO/glass substrate by radio-frequency magnetron sputtering. Field-emission scanning electron microscope (FE-SEM) and atomic force microscopic (AFM) images showed the morphology of TiO 2 channel layer with grain size and root-mean-square (RMS) roughness of 15 and 5.39 nm, respectively. TiO 2 thin-film transistors (TFTs) with sputter-SiO 2 gate dielectric layer were also fabricated. It was found that the devices exhibited enhancement mode characteristics with the threshold voltage of 7.5 V. With 8-μm gate length, it was also found that the I on /off ratio and off-state current were around 1.45×10 2 and 10 nA, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
