Abstract
In this paper, for the first time, we report a study on the short channel performance of single halo (SH) thin film silicon-on-insulators (SOI) nMOSFETs for mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and a low impurity concentration in the rest of the channel. Besides having excellent DC output characteristics, better V/sub th/-L roll-off control, lower DIBL, higher breakdown voltages and kink free operation, these devices show higher AC transconductance, higher output resistance and better dynamic intrinsic gain. The experimental results have also shown that SH SOI MOSFETs exhibit lower hot carrier degradation in comparison with the conventional (CON) homogeneously doped SOI MOSFETs. The lower capacitance near the drain region due to low impurity concentration is also beneficial in analog applications.
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