Abstract
Integrating block copolymer self-assembly with existing lithography processes to enhance their patterning capability is a promising approach for manufacturing a variety of semiconductor devices and next-generation magnetic storage media. Sub-10 nm block copolymer domains are specifically targeted in many of these applications, yet there are relatively few block copolymers that can achieve these dimensions. Here the synthesis and self-assembly characteristics of a new block copolymer poly(trimethylsilylstyrene-b-d,l-lactide) (PTMSS-b-PLA) capable of forming domains as small as ∼5 nm are described. Several lamellar and cylinder forming diblocks were synthesized with bulk domain periodicities of 12–15 nm which are among the smallest domains yet reported for any neat block copolymer. Such small domains are possible because this new material has a large segment–segment interaction parameter which is an order of magnitude higher than poly(styrene-b-methyl methacrylate) (PS-b-PMMA) and twice as large as poly(styrene-b-dimethylsiloxane) (PS-b-PDMS), two commonly studied polymers for these applications. Furthermore, the PTMSS-b-PLA blocks have glass transitions well above room temperature with a large reactive ion etch rate contrast between them (∼28) which is at least 4 times greater than PS-b-PMMA due to incorporation of a trimethylsilyl group into the styrene monomer.
Published Version
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