Abstract
The structural, optical, and electronic properties of thin films of a family of wide band gap ( E g > 2.3 eV) p-type semiconductors Cu 3TaQ 4 (Q = S or Se) are presented. Thin films prepared by pulsed laser deposition of ceramic Cu 3TaQ 4 targets and ex-situ annealing of the as-deposited films in chalcogenide vapor exhibit mixed polycrystalline/[100]-directed growth on amorphous SiO 2 substrates and strong (100) preferential orientation on single-crystal yttria-stabilized zirconia substrates. Cu 3TaS 4 ( E g = 2.70 eV) thin films are transparent over the entire visible spectrum while Cu 3TaSe 4 ( E g = 2.35 eV) thin films show some absorption in the blue. Thin film solid solutions of Cu 3TaSe 4 − x S x and Cu 3TaSe 4 − x Te x can be prepared by annealing Cu 3TaSe 4 films in a mixed chalcogenide vapor. Powders and thin films of Cu 3TaS 4 exhibit visible photoluminescence when illuminated by UV light.
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