Abstract

In this study, wholly aromatic main chain copoly(ester–amide)s containing tetrafluorophthalic acid (TFPA-ortho), tetrafluoroisophthalic acid (TFIA-meta) and tetrafluoroterephthalic acid (TFTA-para) were synthesized to study the effects of kinks on the formation of mesophase and crystal texture. The effects of kink moieties on these copoly(ester–amide)s were also investigated by the ‘RIS’ metropolis Monte Carlo simulation. Computational results indicate that all systems form thermotropic liquid crystalline polymers (LCPs) because the calculated persistence ratios for the ortho-, meta- and para-linkage systems are 6.51, 7.64 and 10.49, respectively. Both simulation and experimental results agree that ABA/AAA/TFTA (para) system has the greatest tendency to yield the liquid crystal (LC) phase due to its greater persistence ratio, linearity, and chain stiffness. The incorporation of TFPA (ortho) moiety can effectively reduce 30% of the molar stiffness function and 23% of the persistence length as compared to those of the TFTA (para) system. Yet, the ABA/AAA/TFPA system may form LC texture because of its large, rigid, disk-like TFPA moiety and the crankshaft structure induced by cis-configuration between AAA and TFPA moieties. The meta-linkage system has a slower LC growth rate, but it has a much higher tendency to form LC than the ortho-linkage. Both meta- and para-linkage systems have close critical ABA content to form LC texture. When comparing the requirements of critical ABA content between ABA/AAA/TFIA and ABA/AAA/IA (isophthalic acid) systems, we surprisingly observed that the former has a much lower critical ABA content than the latter. The four fluorine substituents of TFIA definitely help chain rigidity and stabilize the LC mesogens. Even though these fluorinated moieties exhibit different conformations and configurations, they yield similar end-stage crystalline structure. The spherulites are grown from the dark brushes around a single disclination, indicating that these are the lowest energy for crystallization.

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