Abstract
During this third quarter of the program, the high pressure plasma (hpp) deposition process has been thoroughly evaluated using SiHCl/sub 3/ and SiCl/sub 4/ silicon source gases, by the gas chromatographic analysis of the effluent gases from the reactor. Both the deposition efficiency and reactor throughput rate were found to be consistently higher for hpp mode of operation compared to conventional CVD mode. The figure of merit for various chlorosilanes as a silicon source gas for hpp deposition is discussed. A new continuous silicon film deposition scheme is developed, and system design is initiated. This new system employs gas interlocks and eliminates the need for gas curtains which have been found to be problematic. Solar cells (2 cm x 2 cm area) with AM1 efficiencies of up to 12% were fabricated on RTR grain enhanced hpp deposited films. The parameters of a 12% cell under simulated AM1 illumination were: V/sub OC/ = 0.582 volts, J/sub SC/ = 28.3 mA/cm/sup 2/ and F.F. = 73.0%.
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