Abstract
Poly-Si film prepared by PECVD method showed low ESR spin density of around 1E16/cm3 and poly-Si film prepared by Cat-CVD method showed relatively low ESR spin density of around 1E17/cm3. The cell using PECVD poly-Si film as a photo-active layer showed an intrinsic cell efficiency of 7.75%. Light confinement micro-structure was introduced to the cell applying RIE method to the glass substrate surface and enhancement of Jsc was observed.
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