Abstract
We demonstrate a thin film photodiode structure consisting of multi layers of colloidal quantum dots (QDs) which has application in photovoltaics and photodetection. The CdTe QDs with either positively or negatively charged capping ligands are self-assembled layer-by-layer on an indium tin oxide (ITO) substrate by electrostatic attraction in aqueous solution. A photolithographically patterned photoresist window defines the device active area and an evaporated aluminum (Al) thin film serves as the top electrode. The built-in electric field due to the work function difference between Al and ITO separates photo-excited electron-hole pairs and generates photocurrent. Since the ligands used for QD synthesis are short (less than 0.5 nm), no additional steps of ligand exchange or annealing is needed for enhancing the thin film photoconductivity. Thiol passivation and self-assembly in an inert environment help reduce surface traps, leading to less fermi-level pinning which also improves the device performance.
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