Abstract

AbstractThe use of sputtered thin‐film permanent magnets for biasing microwave devices in planar geometries compatible with monolithic integration is considered. Possible geometries are presented for biasing a reciprocal microstrip phaser at 7 GHz, a stripline circulator at 15 GHz, and a magnetostatic wave delay line at 3 GHz. Yttrium iron garnet (YIG) is assumed to be the ferrite used in each of these devices. It is concluded that the in‐plane magnetization orientation is more useful than normal magnetization, and thick films (100‐150 μm) are needed with high magnetization ( > 16 kG) and moderate coercivity ( > 2 kOe). Below‐resonance devices are preferable because of their modest field requirements and tolerance to bias field inhomogeneities.

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