Abstract
We report for the first time on the creation of 288 × 2 matrix photodetectors with an element size of 25 × 25 μm based on PbSnTe:In/BaF2/CaF2/Si structures and present their threshold characteristics. The detection ability of about 90% elements ranges from 7.2 × 1012 to 8.7 × 1012 cm Hz0.5/W at T = 21.2 K. The proposed technology opens ways to the creation of monolithic matrix photodetectors operating in the far-IR range.
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