Thin film magnetoelectric composites near spin reorientation transition

Abstract

We report the use of a magnetic instability of the spin reorientation transition type to enhance the magnetoelectric sensitivity in magnetostrictive–piezoelectric structures. We present the theoretical study of a clamped beam resonant actuator composed of a piezoelectric element on a passive substrate actuated by a magnetostrictive nanostructured layer. The experiments were made on a polished 150 μm thick 18×3 mm 2 lead zirconate titanate (PZT) plate glued to a 50 μm thick silicon plate and coated with a giant magnetostrictive nanostructured Nx(TbCo 2 5nm/FeCo 5nm) layer. A second set of experiments was done with magnetostrictive layer deposited on PZT plate. Finally, a film/film structure using magnetostrictive and aluminium nitride films on silicon substrate was realized, and showed ME amplitudes reaching 30 V Oe −1 cm −1. Results agree with analytical theory.