Abstract
Thin-film heterojunction field-effect transistor (HJFET) devices with hydrogenated amorphous Si gate and hydrogenated poly-Si source and drain regions are demonstrated on small-grain poly-Si substrates. The transistor fabrication process (excluding poly-Si preparation) temperature is below ~200 °C. The HJFET devices enable lower operation voltages, steeper subthreshold characteristics, lower flicker noise, and higher stability than conventional poly-Si devices. A low-power HJFET amplifier suitable for capacitive reading of biological signals is also demonstrated.
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