Abstract
SrBi 4Ti 4O 15, Sr 2Bi 4Ti 5O 18 and Sr 3Bi 4Ti 6O 21 thin films were grown on (100)MgO and (100)Pt/ (100)MgO substrates by the pulsed laser deposition (PLD) method. X-ray diffraction (XRD) revealed c-axis-oriented crystal growth of each SiBiTiO film. Reflection high-energy electron diffraction (RHEED) from the films grown on MgO showed streak patterns which indicates the epitaxial ordering of fabricated thin films. Fundamental optical absorption of SrBi 4Ti 4O 15, Sr 2Bi 4Ti 5O 18 and Sr 3Bi 4Ti 6O 21 films started at 3.4. 3.5 and 3.7 eV, respectively. Moreover, the Fourier transform infrared (FT1R) spectra also revealed a systematic change in their longitudinal optical (LO) phonon absorption dip structure.
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