Abstract
epitaxial layers with submicron thickness were grown employing a phosphorus ambient LPE technique without In melt etching. The grown layer surfaces were smooth and there was no wave‐like morphology, which showed good melt wetting on the substrates. The measured electron Hall mobility in the epilayer was maintained large near the interface with the substrate, and the electron saturated velocity in the FET channel was estimated at . MESFET's with gate dimensions were fabricated in the grown layers. A d‐c maximum transconductance of 22 ms and a current gain cutoff frequency of about 40 GHz have been obtained.
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