Abstract
The SrRuO 3 thin films were grown on amorphous fused silica and (100) single crystal LaAlO 3 substrates by pulsed laser deposition method. On fused silica substrates, polycrystalline SrRuO 3 thin film was obtained and below the crystallization temperature, SrRuO 3 thin films show an amorphous phase. For the case of epitaxial growth on (100) single crystal LaAlO 3 substrate, the crystallization temperature of SrRuO 3 thin film was increased by ∼ 100 °C indicating that additional energy is necessary in order to obtain the epitaxial thin film. By using the eclipse method and the control of substrate temperature, the variations of surface morphologies and grain size were observed by atomic force microscope. Below the crystallization temperature, amorphous SrRuO 3 thin film shows hopping transport property of an insulator.
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