Abstract

AbstractCd1‐xZnxTe (x∼0.5) thin films with less than 300μm are grown on ITO/glass substrate by Hot‐wall and PVT methods, one of the sublimation methods. In order to obtain the films with high resistivity and good quality for X‐ray sensor, three attempts have been tried in the experiments. The one is stoichiometry control of CZT (x = 0.04) films, which were grown under controlled Cd vapor pressure. The second is excess chlorine doping to the films (x = 0.04) by controlling CdCl2 vapor pressure during growth process. The third is to change composition x = 0.04‐0.50, which increases band gap. Through these methods, best films with good X‐ray response was obtained for the third case of the films with the composition x = 0.20. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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