Abstract
In this paper we will propose the usefulness of time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) for the investigation of the initial growth mechanism of thin film on the solid surface. By using this technique we can estimate not only the structure of the grown metal crystallites but also the growth mode of the metal thin film on the solid surface and the size of the grown metal crystallites in a real-time measurement.
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