Abstract
AbstractEuxCa1–xGa2S4 is one of the phosphors with high luminescence quantum efficiency. It has high optical gain due to less concentration quenching for Eu centre. Production of EuGa2S4 film with smooth surface would lead to a possible construction of surface emitting lasers. We prepared films by sputtering with EuGa2S4 target. The EuGa2S4 films deposited on the substrates heated at 550–640 °C had the surfaces smoother than that of films post‐annealed at 800–900 °C. The Eu3Ga5O12 films were deposited on the substrates heated at 660–800 °C. The Eu3Ga5O12 films, which were transparent and colourless, showed no photoluminescence and had smooth surfaces. The films were deposited on the cooled substrate for 30 min and sequentially deposited on the substrate heated at 640–700 °C for 10–30 min. The films, which consisted of two layers, EuGa2S4 and Eu3Ga5O12, show high transmittances and exhibited yellow green emission. The films have the possibility to be applied to the laser. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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