Abstract
We demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al0.37Ga0.63N layer. The electroluminescence spectrum of the TFFC LED corresponds well to the as-grown LED structure, showing no sign of degradation of structural and optical properties by electrochemical etching. This is achieved by a proper epitaxial design of the sacrificial layer and the etch stop layers in relation to the LED structure and the electrochemical etch conditions. Enabling a TFFC UV LED is an important step toward improving the light extraction efficiency that limits the power conversion efficiency in AlGaN-based LEDs.
Highlights
V light-emitting diodes (LEDs) are expected to replace conventional UV light sources like mercury gas discharge lamps due to their small form factor, robustness, environmentally friendly materials, and selectable emission wavelength.2 the poor power conversion efficiency of UV LEDs below 10% for wavelengths shorter than 350 nm, see Ref
We demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al0:37Ga0:63N layer
TFFC LEDs emitting in the ultraviolet A (UVA) and achieved an improvement in the light extraction efficiency (LEE) of 1:7Â compared to a flip-chip (FC) design
Summary
V light-emitting diodes (LEDs) are expected to replace conventional UV light sources like mercury gas discharge lamps due to their small form factor, robustness, environmentally friendly materials, and selectable emission wavelength.2 the poor power conversion efficiency of UV LEDs below 10% for wavelengths shorter than 350 nm, see Ref. ABSTRACT We demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al0:37Ga0:63N layer.
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