Abstract
Luminescence properties of impurity-doped ZnS nanocrystals have been investigated for their application to a thin-film electroluminescence (TFEL) device as an emission layer. Two impurity-doped series with different emission mechanisms have been examined, i.e., Mn-doped ZnS nanocrystals for orange emission due to Mn 2+ 4 T 1( 4 G)– 6 A 1( 6 S) transitions and Ag and Al co-doped ZnS nanocrystals for blue emission due to Al Zn + donor– Ag Zn − acceptor pair recombinations. Regarding photoluminescence (PL), with a reduction of the crystal size, PL efficiencies of the orange and blue bands increase. On the other hand, EL is observed only from ac-driven TFEL devices with ZnS:Mn nanocrystals.
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