Thin-film devices for low power applications

S Monfray,C Fenouillet-Beranger,G Bidal,F Boeuf,S Denorme,J.L Huguenin,M.P Samson,N Loubet,J.M Hartmann,Y Campidelli,V Destefanis,C Arvet,K Benotmane,L Clement,O Faynot,T Skotnicki

doi:10.1016/j.sse.2009.12.013

Thin-film devices for low power applications

S Monfray, C Fenouillet-Beranger + Show 14 more

https://doi.org/10.1016/j.sse.2009.12.013

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Journal: Solid State Electronics	Publication Date: Dec 23, 2009
Citations: 23

Affiliation: STMicroelectronics (France), CEA LETI, Université Grenoble Alpes, Grenoble Institute of Technology, CEA Grenoble, Atomic Energy and Alternative Energies Commission

#Ultra-Thin Body Devices #22nm Nodes + Show 8 more

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Abstract

Power consumption and matching are the principal issues at the 32nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present thin-film technologies (FDSOI, LSOI and bulk+) leading to the integration of single gated thin films devices for 22nm nodes and below.

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