Thin Film Deposition

Abstract

The controlled deposition of thin organic and inorganic films is an important step in the manufacture of integrated circuits. These films are deposited to remain as an inherent part of the device structure (Fig. 3.1), or to constitute intermediate layers that are used for particular processing steps and then removed. The methods for the deposition of thin films fall into three broad categories: chemical vapor deposition (CVD), physical vapor deposition (PVD), and overlapping techniques which combine both physical and chemical processes [1,2]. This chapter discusses the deposition of single crystal silicon, polysilicon, silicon dioxide, silicon nitride, and gallium arsenide. The deposition of metals and metal compounds is discussed in Chap. 8.