Abstract
The present invention is intended to provide a thin film bulk acoustic wave resonator, which has a resonant excitation portion free from damage caused by etching, a high electromechanical coupling coefficient k t 2 and a high quality coefficient Q value, and to provide a thin film bulk acoustic wave resonator having a plurality of different resonant frequencies, which can be formed on the same substrate without increasing number of lithography process. An internal cavity is provided in a semiconductor or insulative substrate such as crystal silicon. The thin film bulk acoustic wave resonator has a layered member comprising a first electrode film, a piezoelectric film and a second electrode film on a thin wall of e.g. single crystal over the internal cavity.
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