Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

Abstract

The growth of thin cubic silicon carbide (3C-SiC) buffer layers in an horizontal hot-wall chemical vapor deposition reactor, through the carbonization of differently oriented Si surfaces, is presented. A qualitative and quantitative study has been performed on statistical parameters related to voids due to the buffer layer growth on the different substrate orientations emphasizing shape, size, and density as a function of the substrate orientation. Variation in the void parameters can be attributed to the atomic packing density related to the substrate orientations, which were (100) Si, (111) Si, and (110) Si in this study. Scanning electron microscopy and transmission electron microscopy were performed to analyze the surface and the crystalline quality of the 3C-SiC films grown and, eventually, an empirical model for the carbonization of Si surfaces formulated. Large platens characterize the 3C-SiC films with shapes related to the orientations of the substrate. These platens derive from the two-dimensional growth of different SiC islands which enlarge during the process due to the continuous reaction between Si and C atoms. The interior part of platens was characterized by the presence of a pure crystalline material with the presence of small tilts affecting some grains in the 3C-SiC layer in order to relief the stress generated with the substrate.