Abstract
Thin BN films (100–250 nm) have been deposited on Si(100) substrates in a double-ion-beam sputtering system from a h-BN target. The films have been characterized by FT-IR spectroscopy and spectroscopic phase-modulated ellipsometry as a function of the deposition and irradiation parameters. Assistance with Ar + ions result in boron rich films with refraction indexes above 2 or even higher as the deposited energy of the assisting ions increases. N 2 +-bombardment causes stoichiometric and even nitrogen-rich BN films characterized by refraction indexes around 1.85. The stability of the films is enhanced when the deposited energy of the N 2 + ions is above 30 eV/atom and/or the deposition is performed on substrates at temperatures above 100°C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
