Abstract
Bi0.89Ho0.08Sr0.03Fe0.97-aMn0.03NiaO3/Bi0.89Ho0.08Sr0.03Fe0.97-bMn0.03NibO3 (Nia/Nib) superlattice films were prepared by the sol–gel successfully. The influence of the change of the thickness of the superlattice films on the multiferroic and resistance switching properties were studied. It shows that due to the reduction of internal stress, the thin Nia/Nib superlattice films make the layer interface effect enhance to get more the interface charges, which improves the efficiency of the interaction between the interface charges, thereby obtaining good resistance switching (RS) performances. However, the thick Nia/Nib superlattice films improved the ferroelectricity due to the smaller layer interface effect. It indicates that changing the thickness of the single layer of the superlattice film is beneficial to the regulation of the properties of the films. Eventually, the different applications of BiFeO3 film in modern microelectronic devices can be realized by adjusting the thickness of the superlattice film.
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