Thickness measurement of deterioration layer of monocrystalline silicon by specific crystallographic plane cutting of wire electrical discharge machining

Abstract

The thickness of the deterioration layer in the specific crystallographic plane of monocrystalline silicon, which was processed under different conditions of wire-cut electrical discharge machining (WEDM), was measured through X-ray diffraction rocking curve method in this work. Results showed that the deterioration layer thickness differed for the same crystallographic planes of monocrystalline silicon, which was processed under a different pulse width. The thickness of the deterioration layer increased with the increase of pulse width. Under the same electrical parameters of WEDM, the various crystallographic planes of the monocrystalline silicon correspond to the different deterioration layer thicknesses. The thickness also decreases with the increase of bond density between adjacent crystals, indicating that anisotropy exists in monocrystalline silicon processing of WEDM. Hence, the technology based on the X-ray diffraction rocking curve method, which can detect the deterioration layer thickness of the monocrystalline silicon, is proposed in this paper. Furthermore, this research will provide a basis for future studies on the deterioration layer of monocrystalline silicon.