Abstract
Molybdenum disulfide (MoS₂) films were directly formed on soda-lime glass substrates by radio-frequency (RF) sputtering and rapid thermal processing (RTP) to avoid physical exfoliation and transfer process of a MoS₂ layer. The sputtering time was adjusted in the fabrication process and the thickness effects of the MoS₂ films were investigated in terms of structural and electrical characteristics. The surface morphologies were not dependent on the film thickness but on the RF sputtering power after the film was annealed using RTP. The electrical mobility of the MoS₂ film was more dependent on the film thickness at lower RF sputtering powers and low annealing temperatures. An investigation of the E12g and A11g peaks in the Raman spectra revealed that the two-dimensional properties of the MoS₂ layers were more distinct in the case of a lower thickness.
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